Технічний опис IR20153SPBF Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Voltage - Supply: 5V ~ 20V, Input Type: Inverting, High Side Voltage - Max (Bootstrap): 150 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 200ns, 100ns, Channel Type: Single, Driven Configuration: High-Side, Number of Drivers: 1, Gate Type: N-Channel MOSFET, Logic Voltage - VIL, VIH: 1.4V, 3V, Current - Peak Output (Source, Sink): 1.5A, 1.5A, Part Status: Obsolete, DigiKey Programmable: Not Verified.
Інші пропозиції IR20153SPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IR20153SPBF | Виробник : Infineon Technologies |
 Description: IC GATE DRVR HIGH-SIDE 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 5V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 150 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 200ns, 100ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.4V, 3V Current - Peak Output (Source, Sink): 1.5A, 1.5A Part Status: Obsolete DigiKey Programmable: Not Verified |
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