IR2112-2PBF

IR2112-2PBF Infineon Technologies


ir2112.pdf?fileId=5546d462533600a4015355c81cb71685 Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm), 14 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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Технічний опис IR2112-2PBF Infineon Technologies

Description: IC GATE DRVR HI/LOW SIDE 16DIP, Packaging: Tube, Package / Case: 16-DIP (0.300", 7.62mm), 14 Leads, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 16-PDIP, Rise / Fall Time (Typ): 80ns, 40ns, Channel Type: Independent, Driven Configuration: High-Side or Low-Side, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 6V, 9.5V, Current - Peak Output (Source, Sink): 250mA, 500mA, Part Status: Obsolete, DigiKey Programmable: Not Verified.