Технічний опис IRF1310N
- MOSFET, N TO-220
- Transistor Polarity:N
- Max Voltage Vds:100V
- On State Resistance:0.036ohm
- Power Dissipation:170W
- Transistor Case Style:TO-220AB
- No. of Pins:3
- Case Style:TO-220AB
- Cont Current Id:41A
- Current Temperature:25`C
- Device Marking:IRF1310N
- Full Power Rating Temperature:25`C
- Lead Spacing:2.54mm
- No. of Transistors:1
- Pin Configuration:a
- Pin Format:1 g
- 2 d/tab
- 3 s
- Power Dissipation Pd:170W
- Pulse Current Idm:160A
- Transistor Type:MOSFET