IRF322 International Rectifier

Description: N-CHANNEL HERMETIC MOS HEXFET, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: TO-204AA, TO-3, Packaging: Bulk, Drain to Source Voltage (Vdss): 400 V, Part Status: Active, Supplier Device Package: TO-204AA (TO-3), Power Dissipation (Max): 50W, Current - Continuous Drain (Id) @ 25°C: 2.8A, FET Type: N-Channel.