IRF3515STRLPBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 41A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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Технічний опис IRF3515STRLPBF Infineon Technologies
Description: MOSFET N-CH 150V 41A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Cut Tape (CT).