IRF3711ZCL Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 92A TO262
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
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Технічний опис IRF3711ZCL Infineon Technologies
Description: MOSFET N-CH 20V 92A TO262, Packaging: Tube, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-262, Vgs(th) (Max) @ Id: 2.45V @ 250µA, Power Dissipation (Max): 79W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 92A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±20V.


