IRF5810TR Infineon Technologies

Description: MOSFET 2P-CH 20V 2.9A 6TSOP, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 1.2V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V, Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V, Current - Continuous Drain (Id) @ 25°C: 2.9A, Drain to Source Voltage (Vdss): 20V, Power - Max: 960mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).