Технічний опис IRF6604TR1 IR - ASA only Supplier
Description: MOSFET N-CH 30V 12A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MQ, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc), Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 7V, Power Dissipation (Max): 2.3W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: DIRECTFET™ MQ, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V.
Інші пропозиції IRF6604TR1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IRF6604TR1 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH Si 30V 12A 7-Pin Direct-FET MQ T/R |
товару немає в наявності |
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IRF6604TR1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 30V 12A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MQ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 7V Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: DIRECTFET™ MQ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V |
товару немає в наявності |