IRF6622TR1PBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 15A DIRECTFET
Power Dissipation (Max): 2.2W (Ta), 34W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SQ
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 13 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ SQ
Vgs(th) (Max) @ Id: 2.35V @ 25µA
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Технічний опис IRF6622TR1PBF Infineon Technologies
Description: MOSFET N-CH 25V 15A DIRECTFET, Power Dissipation (Max): 2.2W (Ta), 34W (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 59A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric SQ, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 13 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DIRECTFET™ SQ, Vgs(th) (Max) @ Id: 2.35V @ 25µA.