IRF6626TRPBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 16A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ ST
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric ST
Packaging: Tape & Reel (TR)
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Технічний опис IRF6626TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 16A DIRECTFET, Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DIRECTFET™ ST, Vgs(th) (Max) @ Id: 2.35V @ 250µA, Power Dissipation (Max): 2.2W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric ST, Packaging: Tape & Reel (TR).