IRF6636 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 20V 18A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: DIRECTFET™ ST
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 10 V
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Технічний опис IRF6636 Infineon Technologies
Description: MOSFET N-CH 20V 18A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric ST, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 81A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V, Power Dissipation (Max): 2.2W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 2.45V @ 250µA, Supplier Device Package: DIRECTFET™ ST, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 10 V.