IRF6636TR1 Infineon Technologies

Description: MOSFET N-CH 20V 18A DIRECTFET, Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DIRECTFET™ ST, Vgs(th) (Max) @ Id: 2.45V @ 250µA, Power Dissipation (Max): 2.2W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 81A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric ST, Packaging: Tape & Reel (TR).