IRF6709S2TR1PBF Infineon Technologies

Description: MOSFET N-CH 25V 12A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric S1, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 39A (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V, Power Dissipation (Max): 1.8W (Ta), 21W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: DirectFET™ Isometric S1, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 13 V.