IRF6718L2TR1PBF Infineon Technologies

Description: MOSFET N-CH 25V 61A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric L6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc), Rds On (Max) @ Id, Vgs: 0.7mOhm @ 61A, 10V, Power Dissipation (Max): 4.3W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 150µA, Supplier Device Package: DIRECTFET L6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 13 V.