Технічний опис IRF7103PBF IR
Description: MOSFET 2N-CH 50V 3A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 50V, Current - Continuous Drain (Id) @ 25°C: 3A, Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Discontinued at Digi-Key.
Інші пропозиції IRF7103PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IRF7103PBF | Виробник : Infineon Technologies |
 Trans MOSFET N-CH Si 50V 3A 8-Pin SOIC Tube |
товар відсутній |
|
 |
IRF7103PBF | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 50V 3A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key |
товар відсутній |
|
 |
IRF7103PBF | Виробник : Infineon Technologies |
MOSFET 50V DUAL N-CH HEXFET 130mOhms 12nC |
товар відсутній |
|
 |
IRF7103PBF | Виробник : Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 50V Drain current: 3A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 12nC Kind of channel: enhanced |
товар відсутній |