IRF7309TR UMW
Виробник: UMWDescription: MOSFET N/P-CH 30V 4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
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Технічний опис IRF7309TR UMW
Description: MOSFET N/P-CH 30V 4A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V, Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SOP.