IRF7451PBF Infineon Technologies

Description: MOSFET N-CH 150V 3.6A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 5.5V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube.