IRF7524D1PBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 1.7A MICRO8
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.25W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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Технічний опис IRF7524D1PBF Infineon Technologies
Description: MOSFET P-CH 20V 1.7A MICRO8, Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V, Mounting Type: Surface Mount, Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Packaging: Tube, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Part Status: Obsolete, Supplier Device Package: Micro8™, Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Power Dissipation (Max): 1.25W (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).