IRF7604TR Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 3.6A MICRO8
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
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Технічний опис IRF7604TR Infineon Technologies
Description: MOSFET P-CH 20V 3.6A MICRO8, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Part Status: Obsolete, Supplier Device Package: Micro8™, Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Packaging: Cut Tape (CT).