IRF7607TRPBFTR Infineon Technologies
Виробник: Infineon Technologies
Description: IRF7607 - 12V-300V N-CHANNEL POW
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
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Технічний опис IRF7607TRPBFTR Infineon Technologies
Description: IRF7607 - 12V-300V N-CHANNEL POW, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: Micro8™, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V, Drain to Source Voltage (Vdss): 20 V.

