IRF7809PBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 28V 14.5A 8SO
Drain to Source Voltage (Vdss): 28 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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Технічний опис IRF7809PBF Infineon Technologies
Description: MOSFET N-CH 28V 14.5A 8SO, Drain to Source Voltage (Vdss): 28 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1V @ 250µA, Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube.