IRF8788TR UMW
Виробник: UMW
Description: MOSFET N-CH 30V 24A 8SOIC
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
| Кількість | Ціна |
|---|---|
| 3000+ | 29.24 грн |
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Технічний опис IRF8788TR UMW
Description: MOSFET N-CH 30V 24A 8SOIC, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.35V @ 100µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 155°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width).