IRF9952QTRPBF Infineon Technologies


IRF9952QPbF.pdf
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 30V 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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Технічний опис IRF9952QTRPBF Infineon Technologies

Description: MOSFET N/P-CH 30V 8-SOIC, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V, Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Cut Tape (CT).