IRFBA1404P Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 206A SUPER-220
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SUPER-220™ (TO-273AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 95A, 10V
Current - Continuous Drain (Id) @ 25°C: 206A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-273AA
Packaging: Tube
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Технічний опис IRFBA1404P Infineon Technologies
Description: MOSFET N-CH 40V 206A SUPER-220, Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: SUPER-220™ (TO-273AA), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 95A, 10V, Current - Continuous Drain (Id) @ 25°C: 206A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-273AA, Packaging: Tube.


