Технічний опис IRFH5204TR2PBF Infineon Technologies
Description: MOSFET N-CH 40V 22A PQFN, Packaging: Cut Tape (CT), Package / Case: 8-VQFN Exposed Pad, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V, Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: PQFN (5x6), Part Status: Obsolete, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 25 V.
Інші пропозиції IRFH5204TR2PBF
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
![]() |
IRFH5204TR2PBF | Виробник : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-VQFN Exposed Pad Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: PQFN (5x6) Part Status: Obsolete Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 25 V |
товару немає в наявності |