IRFH5220TR2PBF Infineon Technologies

Description: MOSFET N-CH 200V 3.8A PQFN, Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Part Status: Obsolete, Supplier Device Package: PQFN (5x6), Vgs(th) (Max) @ Id: 5V @ 100µA, Rds On (Max) @ Id, Vgs: 99.9mOhm @ 5.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: 8-VQFN Exposed Pad, Packaging: Cut Tape (CT).