IRFH7110TR2PBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N CH 100V 11A PQFN5X6
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 100µA
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-TQFN Exposed Pad
Packaging: Cut Tape (CT)
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Технічний опис IRFH7110TR2PBF Infineon Technologies
Description: MOSFET N CH 100V 11A PQFN5X6, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Part Status: Obsolete, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 4V @ 100µA, Rds On (Max) @ Id, Vgs: 13.5mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: 8-TQFN Exposed Pad, Packaging: Cut Tape (CT).