IRFH7182TRPBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 23A/157A 8PQFN
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 4W (Ta), 195W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
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Технічний опис IRFH7182TRPBF Infineon Technologies
Description: MOSFET N-CH 100V 23A/157A 8PQFN, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Power Dissipation (Max): 4W (Ta), 195W (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete.