Технічний опис IRFH7911TR2PBF Infineon Technologies
Description: MOSFET 2N-CH 30V 13A/28A PQFN, Packaging: Cut Tape (CT), Package / Case: 18-PowerVQFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Technology: MOSFET (Metal Oxide), Power - Max: 2.4W, 3.4W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 13A, 28A, Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: PQFN (5x6), Part Status: Obsolete.
Інші пропозиції IRFH7911TR2PBF
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IRFH7911TR2PBF | Виробник : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 18-PowerVQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W, 3.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 28A Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: PQFN (5x6) Part Status: Obsolete |
товару немає в наявності |