IRFHM8342TRPBF-IR International Rectifier


irfhm8342pbf.pdf?fileId=5546d462533600a4015356236feb1f55 Виробник: International Rectifier
Description: MOSFET N-CH 30V 10A/28A 8PQFN DL
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 17A, 10V
Power Dissipation (Max): 2.6W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN-Dual (3.3x3.3), Power33
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
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Технічний опис IRFHM8342TRPBF-IR International Rectifier

Description: MOSFET N-CH 30V 10A/28A 8PQFN DL, Packaging: Bulk, Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 28A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 17A, 10V, Power Dissipation (Max): 2.6W (Ta), 20W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: 8-PQFN-Dual (3.3x3.3), Power33, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V.