IRFHM8363TR2PBF Infineon Technologies

Description: MOSFET 2N-CH 30V 11A 8PQFN, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 11A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2.7W, Technology: MOSFET (Metal Oxide), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Cut Tape (CT), Supplier Device Package: 8-PQFN-Dual (3.3x3.3), Vgs(th) (Max) @ Id: 2.35V @ 25µA, FET Feature: Logic Level Gate.