Технічний опис IRFHM9331TR2PBF Infineon Technologies
Description: MOSFET P-CH 30V 11A 3X3 PQFN, Packaging: Cut Tape (CT), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 11A, 20V, Vgs(th) (Max) @ Id: 2.4V @ 25µA, Supplier Device Package: PQFN (3x3), Part Status: Obsolete, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1543 pF @ 25 V.
Інші пропозиції IRFHM9331TR2PBF
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IRFHM9331TR2PBF | Виробник : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 11A, 20V Vgs(th) (Max) @ Id: 2.4V @ 25µA Supplier Device Package: PQFN (3x3) Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1543 pF @ 25 V |
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