IRFHM9331TR2PBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 11A 3X3 PQFN
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1543 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: PQFN (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 11A, 20V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc)
FET Type: P-Channel
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Технічний опис IRFHM9331TR2PBF Infineon Technologies
Description: MOSFET P-CH 30V 11A 3X3 PQFN, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Cut Tape (CT), Input Capacitance (Ciss) (Max) @ Vds: 1543 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Part Status: Obsolete, Supplier Device Package: PQFN (3x3), Vgs(th) (Max) @ Id: 2.4V @ 25µA, Rds On (Max) @ Id, Vgs: 10mOhm @ 11A, 20V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc), FET Type: P-Channel.


