Технічний опис IRFHS8242TR2PBF Infineon Technologies
Description: MOSFET N-CH 25V 9.9A PQFN, Packaging: Cut Tape (CT), Package / Case: 6-PowerVDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V, Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: 6-PQFN (2x2), Part Status: Obsolete, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V.
Інші пропозиції IRFHS8242TR2PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IRFHS8242TR2PBF | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 25V 9.9A PQFNPackaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 6-PQFN (2x2) Part Status: Obsolete Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V |
товару немає в наявності |