IRFS610BFP001 Fairchild Semiconductor

Description: POWER FIELD-EFFECT TRANSISTOR, N, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.65A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.3A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220F, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 22W (Tc).