IRFSL4020PBF Infineon Technologies

Description: MOSFET N-CH 200V 18A TO262, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-262, Vgs(th) (Max) @ Id: 4.9V @ 100µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 11A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.