IRFU3518-701PBF Infineon Technologies

Description: MOSFET N-CH 80V 38A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: IPAK (TO-251AA), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 110W (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.