IRFU3806PBF

IRFU3806PBF Infineon Technologies


irfr3806pbf.pdf?fileId=5546d462533600a401535631e18720d9
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 43A IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
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Технічний опис IRFU3806PBF Infineon Technologies

Description: MOSFET N-CH 60V 43A IPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: IPAK (TO-251AA), Vgs(th) (Max) @ Id: 4V @ 50µA, Power Dissipation (Max): 71W (Tc), Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V.