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IRG7CH28UEF Infineon Technologies

irg7ch28uef.pdf
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Package / Case: Die
Packaging: Bulk
Voltage - Collector Emitter Breakdown (Max): 1200 V
Part Status: Obsolete
Gate Charge: 60 nC
Test Condition: 600V, 15A, 22Ohm, 15V
Td (on/off) @ 25°C: 35ns/225ns
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 2.5A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
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Технічний опис IRG7CH28UEF Infineon Technologies

Description: IGBT 1200V ULTRA FAST DIE, Package / Case: Die, Packaging: Bulk, Voltage - Collector Emitter Breakdown (Max): 1200 V, Part Status: Obsolete, Gate Charge: 60 nC, Test Condition: 600V, 15A, 22Ohm, 15V, Td (on/off) @ 25°C: 35ns/225ns, Supplier Device Package: Die, Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 2.5A, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Surface Mount.