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IRG7CH73K10EF-R Infineon Technologies

irg7ch73k10ef-r.pdf
Виробник: Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE
Voltage - Collector Emitter Breakdown (Max): 1200 V
Gate Charge: 420 nC
Test Condition: 600V, 75A, 5Ohm, 15V
Td (on/off) @ 25°C: 105ns/45ns
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 20A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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Технічний опис IRG7CH73K10EF-R Infineon Technologies

Description: IGBT 1200V ULTRA FAST DIE, Voltage - Collector Emitter Breakdown (Max): 1200 V, Gate Charge: 420 nC, Test Condition: 600V, 75A, 5Ohm, 15V, Td (on/off) @ 25°C: 105ns/45ns, Supplier Device Package: Die, Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 20A, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Bulk.