IRGS4055PBF Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT 300V 110A 255W D2PAK
Power - Max: 255 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 110 A
Gate Charge: 132 nC
Test Condition: 180V, 35A, 10Ohm
Td (on/off) @ 25°C: 44ns/245ns
IGBT Type: Trench
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Технічний опис IRGS4055PBF Infineon Technologies
Description: IGBT 300V 110A 255W D2PAK, Power - Max: 255 W, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector (Ic) (Max): 110 A, Gate Charge: 132 nC, Test Condition: 180V, 35A, 10Ohm, Td (on/off) @ 25°C: 44ns/245ns, IGBT Type: Trench, Supplier Device Package: D2PAK, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A, Input Type: Standard, Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.