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IRGS4065PBF

IRGS4065PBF Infineon Technologies

irgb4065pbf.pdf
Виробник: Infineon Technologies
Description: IGBT 300V 70A 178W D2PAK
Power - Max: 178 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 70 A
Gate Charge: 62 nC
Test Condition: 180V, 25A, 10Ohm
Td (on/off) @ 25°C: 30ns/170ns
IGBT Type: Trench
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Технічний опис IRGS4065PBF Infineon Technologies

Description: IGBT 300V 70A 178W D2PAK, Power - Max: 178 W, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector (Ic) (Max): 70 A, Gate Charge: 62 nC, Test Condition: 180V, 25A, 10Ohm, Td (on/off) @ 25°C: 30ns/170ns, IGBT Type: Trench, Supplier Device Package: D2PAK, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A, Input Type: Standard, Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.