Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > IRKC166/12

IRKC166/12 Vishay General Semiconductor - Diodes Division

IRK.166,.196,.236.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1.2KV 165A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: Module
Current - Average Rectified (Io) (per Diode): 165A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3)
Packaging: Bulk
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Технічний опис IRKC166/12 Vishay General Semiconductor - Diodes Division

Description: DIODE MODULE GP 1.2KV 165A, Current - Reverse Leakage @ Vr: 20 mA @ 1200 V, Voltage - DC Reverse (Vr) (Max): 1200 V, Supplier Device Package: Module, Current - Average Rectified (Io) (per Diode): 165A, Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: INT-A-PAK (3), Packaging: Bulk.