IRLHS2242TR2PBF Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET P-CH 20V 5.8A 2X2 PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2)
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 10 V
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Технічний опис IRLHS2242TR2PBF Infineon Technologies
Description: MOSFET P-CH 20V 5.8A 2X2 PQFN, Packaging: Cut Tape (CT), Package / Case: 6-PowerVDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 15A (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 8.5A, 4.5V, Vgs(th) (Max) @ Id: 1.1V @ 10µA, Supplier Device Package: 6-PQFN (2x2), Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 10 V.