Технічний опис IRLI3803PBF Infineon Technologies
Description: MOSFET N-CH 30V 76A TO220AB FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TO-220AB Full-Pak, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V.
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IRLI3803PBF | Виробник : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Full-Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V |
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