IRLR3410CPBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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Технічний опис IRLR3410CPBF Infineon Technologies
Description: MOSFET N-CH 100V 17A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Part Status: Obsolete, Supplier Device Package: D-Pak, Vgs(th) (Max) @ Id: 2V @ 250µA, Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.