IRLU3105PBF

IRLU3105PBF Infineon Technologies


infineon-irlr3105-datasheet-v01_01-en.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH Si 55V 25A 3-Pin(3+Tab) IPAK
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Технічний опис IRLU3105PBF Infineon Technologies

Description: MOSFET N-CH 55V 25A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: I-PAK, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.

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IRLU3105PBF IRLU3105PBF Виробник : International Rectifier IRSDS11331-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 25A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: I-PAK
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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