Технічний опис IRLU3105PBF Infineon Technologies
Description: MOSFET N-CH 55V 25A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: I-PAK, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Інші пропозиції IRLU3105PBF
Фото | Назва | Виробник | Інформація |
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IRLU3105PBF | Виробник : International Rectifier |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: I-PAK Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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