IRS2609DSTRPBF-INF Infineon Technologies
Виробник: Infineon Technologies
Description: IRS2609D - HALF-BRIDGE DRIVER
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 150ns, 50ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Part Status: Active
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.2V
DigiKey Programmable: Not Verified
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Технічний опис IRS2609DSTRPBF-INF Infineon Technologies
Description: IRS2609D - HALF-BRIDGE DRIVER, Gate Type: IGBT, N-Channel MOSFET, Number of Drivers: 2, Driven Configuration: Half-Bridge, Channel Type: Synchronous, Rise / Fall Time (Typ): 150ns, 50ns, Supplier Device Package: 8-SOIC, High Side Voltage - Max (Bootstrap): 600 V, Input Type: Non-Inverting, Voltage - Supply: 10V ~ 20V, Operating Temperature: -40°C ~ 125°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk, Part Status: Active, Current - Peak Output (Source, Sink): 200mA, 350mA, Logic Voltage - VIL, VIH: 0.8V, 2.2V, DigiKey Programmable: Not Verified.


