Технічний опис IS42RM32400H-6BLI ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory: 128Mb DRAM, Memory organisation: 1Mx32bitx4, Clock frequency: 166MHz, Access time: 6ns, Case: TFBGA90, Mounting: SMD, Operating temperature: -40...85°C, Kind of interface: parallel, Kind of package: in-tray; tube, Supply voltage: 2.3...3V DC, кількість в упаковці: 240 шт.
Інші пропозиції IS42RM32400H-6BLI
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IS42RM32400H-6BLI | Виробник : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.3...3V DC кількість в упаковці: 240 шт |
товар відсутній |
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| IS42RM32400H-6BLI | Виробник : ISSI |
DRAM 128M, 2.5V, M-SDRAM 4Mx32, 166Mhz, RoHS |
товар відсутній |
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| IS42RM32400H-6BLI | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.3...3V DC |
товар відсутній |