IS43LQ32512A-053BLI ISSI, Integrated Silicon Solution Inc
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 16G, 1.06-1.17/1.70-1.95V, LPDDR
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 1G x 16
Description: 16G, 1.06-1.17/1.70-1.95V, LPDDR
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 1G x 16
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1500.10 грн |
| 5+ | 1370.36 грн |
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Технічний опис IS43LQ32512A-053BLI ISSI, Integrated Silicon Solution Inc
Description: 16G, 1.06-1.17/1.70-1.95V, LPDDR, Packaging: Tray, Package / Case: 200-TFBGA, Mounting Type: Surface Mount, Memory Size: 16Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 95°C (TC), Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V, Technology: SDRAM - Mobile LPDDR4X, Clock Frequency: 1.866 GHz, Memory Format: DRAM, Supplier Device Package: 200-TFBGA (10x14.5), Write Cycle Time - Word, Page: 18ns, Memory Interface: LVSTL, Access Time: 3.5 ns, Memory Organization: 1G x 16.