Технічний опис IS43QR16512A-083TBL ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C, Memory: 8Gb DRAM, Supply voltage: 1.2V DC, Kind of memory: DDR4; SDRAM, Kind of package: in-tray; tube, Type of integrated circuit: DRAM memory, Case: TWBGA96, Memory organisation: 512Mx16bit, Kind of interface: parallel, Mounting: SMD, Operating temperature: 0...95°C, Access time: 14.16ns.
Інші пропозиції IS43QR16512A-083TBL
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IS43QR16512A-083TBL | ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C Memory: 8Gb DRAM Supply voltage: 1.2V DC Kind of memory: DDR4; SDRAM Kind of package: in-tray; tube Type of integrated circuit: DRAM memory Case: TWBGA96 Memory organisation: 512Mx16bit Kind of interface: parallel Mounting: SMD Operating temperature: 0...95°C Access time: 14.16ns |
товару немає в наявності |
Мінімальне замовлення: 136 шт В кошику од. на суму грн. |
| IS43QR16512A-083TBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C
Memory: 8Gb DRAM
Supply voltage: 1.2V DC
Kind of memory: DDR4; SDRAM
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Case: TWBGA96
Memory organisation: 512Mx16bit
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...95°C
Access time: 14.16ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C
Memory: 8Gb DRAM
Supply voltage: 1.2V DC
Kind of memory: DDR4; SDRAM
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Case: TWBGA96
Memory organisation: 512Mx16bit
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...95°C
Access time: 14.16ns
товару немає в наявності
Мінімальне замовлення: 136 шт
В кошику
од. на суму грн.