Технічний опис IS43QR16512A-083TBL ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C, Memory: 8Gb DRAM, Supply voltage: 1.2V DC, Kind of memory: DDR4; SDRAM, Case: TWBGA96, Mounting: SMD, Access time: 14.16ns, Type of integrated circuit: DRAM memory, Operating temperature: 0...95°C, Kind of interface: parallel, Memory organisation: 512Mx16bit, Kind of package: in-tray; tube.
Інші пропозиції IS43QR16512A-083TBL
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IS43QR16512A-083TBL | ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C Memory: 8Gb DRAM Supply voltage: 1.2V DC Kind of memory: DDR4; SDRAM Case: TWBGA96 Mounting: SMD Access time: 14.16ns Type of integrated circuit: DRAM memory Operating temperature: 0...95°C Kind of interface: parallel Memory organisation: 512Mx16bit Kind of package: in-tray; tube |
товару немає в наявності |
Мінімальне замовлення: 136 шт В кошику од. на суму грн. |
| IS43QR16512A-083TBL |
|
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C
Memory: 8Gb DRAM
Supply voltage: 1.2V DC
Kind of memory: DDR4; SDRAM
Case: TWBGA96
Mounting: SMD
Access time: 14.16ns
Type of integrated circuit: DRAM memory
Operating temperature: 0...95°C
Kind of interface: parallel
Memory organisation: 512Mx16bit
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C
Memory: 8Gb DRAM
Supply voltage: 1.2V DC
Kind of memory: DDR4; SDRAM
Case: TWBGA96
Mounting: SMD
Access time: 14.16ns
Type of integrated circuit: DRAM memory
Operating temperature: 0...95°C
Kind of interface: parallel
Memory organisation: 512Mx16bit
Kind of package: in-tray; tube
товару немає в наявності
Мінімальне замовлення: 136 шт
В кошику
од. на суму грн.